Bulk growth of InAsP crystal

Infrared detectors, especially for the short wave infrared spectral range are fabricated by growing semiconductor alloy thin films having different compositions on high quality substrates. The substrate needs to be of high electronic quality, i.e., it must be of high compositional uniformity, possess very few defects, and ideally be lattice matched with the thin films. Moreover, the optical quality of the substrate needs to be high, i.e., they must transmit light at the desired wavelength range ...