High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
The Department of War seeks development of high-voltage silicon-carbide MOSFETs (>10 kV) with fast turn-on and high current density capabilities to replace complex COTS device arrays. This advancement enables more compact, efficient switching solutions for high-energy capacitor discharge applications with improved gate-driver requirements.