Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

Name: Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Creator: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Published: 2026-07-06T00:00:00+00:00
Keywords: RFP

NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATION.NATIONAL AERONAUTICS AND SPACE ADMINISTRATION.NASA SHARED SERVICES CENTER

AI Overview

NASA solicits development of dry etching processes for combined gallium nitride epitaxial layers and silicon carbide substrates for advanced aerospace applications.

This summary is AI-generated from the official solicitation.

Key Details

Agency

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Funding Amount

—

Release Date

July 6, 2026

Due Date

July 10, 2026 (Closed)

Official Description

See the attached SOW. All correspondence should reference ID# to ensure visibility. PLEASE NOTE THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.

View on official source

Change History

Opportunity AddedJul 7, 2026 at 1:03 PM

Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

New SAM.gov opportunity: Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

Similar Opportunities

Active

ATCA crate

Due July 16, 2026

Get Alerts for Opportunities Like This

RallyProp monitors thousands of funding sources and sends instant alerts when opportunities match your technology and capabilities.

Start Free Trial