High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
AI Overview
The Department of War seeks development of high-voltage silicon-carbide MOSFETs (>10 kV) with fast turn-on and high current density capabilities to replace complex COTS device arrays. This advancement enables more compact, efficient switching solutions for high-energy capacitor discharge applications with improved gate-driver requirements.
This summary is AI-generated from the official solicitation.
Key Details
Official Description
The DOW needs SWaP-favorable solutions for fast turn-on and low-jitter SiC MOSFETs to generate high current densities from high voltage capacitors. Current methods of high-current/voltage switching from SiC MOSFETS rely on an array created from series and parallel combinations of commercial off the shelf (COTS) devices [Ref 1]. However, these device arrays are limited in the voltage and amplitude they can switch, have complicated gate driving circuits, and can become size limited. To improve cur...
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