TEMPERATURE-HARDENED ELECTRONICS FOR RELIABLE MISSION-CRITICAL APPLICATIONS (THERMAL)

Name: TEMPERATURE-HARDENED ELECTRONICS FOR RELIABLE MISSION-CRITICAL APPLICATIONS (THERMAL)
Creator: Department of Defense
Published: 2026-05-06T12:52:50.369466+00:00
Keywords: SBIR

Department of DefenseDARPA

AI Overview

DARPA seeks development of high-speed mixed-signal semiconductors using wide-bandgap materials (SiC/GaN) that operate reliably above 800°C. This addresses critical needs for extreme-temperature electronics in missile systems, space exploration, and geothermal monitoring where conventional silicon fails.

This summary is AI-generated from the official solicitation.

Key Details

Agency

Department of Defense

Funding Amount

—

Release Date

May 6, 2026

Due Date

June 24, 2026 (Closed)

Official Description

The Defense Advanced Research Projects Agency (DARPA) is soliciting innovative proposals for the research and development of mixed-signal IC technology.

Semiconductor electronics face significant challenges in extreme thermal environments, where conventional silicon-based technologies degrade beyond 250°C, limiting their use in defense, aerospace, and energy applications. As demand grows for long-duration reliability, wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) ...

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Change History

Opportunity RemovedJun 24, 2026 at 4:02 PM