12Pre-ReleaseSBIR

RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic

Department of DefenseDMEA

AI Overview

Develop an innovative 200-mm GaN-on-Si technology platform to enable monolithic integration of high-performance RF frontend components like low-noise and power amplifiers. The solution aims to address current limitations in scalable semiconductor technologies for advanced radar, communication, and mobile applications.

This summary is AI-generated from the official solicitation.

Key Details

Agency
Department of Defense
Funding Amount
Release Date
November 18, 2025
Due Date
March 4, 2026
Phase II Award
$1,340,000.00

Official Description

In radio communication system, the RFE of the transceiver typically handles the receive and transmit function portion, whereas the baseband signal processing is typically implemented with digital logic. The radio communication system sensitivity requirements and output power are primarily dependent on the performance of the frontend circuit blocks, specifically the low-noise amplifiers (LNAs) and power amplifiers (PAs). Most of the current radar and military communication systems utilize either ...

Read full description on official source

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