TEMPERATURE-HARDENED ELECTRONICS FOR RELIABLE MISSION-CRITICAL APPLICATIONS (THERMAL)
AI Overview
DARPA seeks development of high-speed mixed-signal semiconductors using wide-bandgap materials (SiC/GaN) that operate reliably above 800°C. This addresses critical needs for extreme-temperature electronics in missile systems, space exploration, and geothermal monitoring where conventional silicon fails.
This summary is AI-generated from the official solicitation.
Key Details
Official Description
The Defense Advanced Research Projects Agency (DARPA) is soliciting innovative proposals for the research and development of mixed-signal IC technology.
Semiconductor electronics face significant challenges in extreme thermal environments, where conventional silicon-based technologies degrade beyond 250°C, limiting their use in defense, aerospace, and energy applications. As demand grows for long-duration reliability, wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) ...
Change History
TEMPERATURE-HARDENED ELECTRONICS FOR RELIABLE MISSION-CRITICAL APPLICATIONS (THERMAL)
Status changed from Pre-Release to Open
TEMPERATURE-HARDENED ELECTRONICS FOR RELIABLE MISSION-CRITICAL APPLICATIONS (THERMAL)
New opportunity: TEMPERATURE-HARDENED ELECTRONICS FOR RELIABLE MISSION-CRITICAL APPLICATIONS (THERMAL)
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